About ATP

Since 1991, ATP Electronics has been recognized as one of the world’s leading original equipment manufacturers (OEM) of high performance, high quality, and high endurance NAND flash products and DRAM modules.

As a True Manufacturer, ATP is fully capable of managing every stage of the manufacturing process to provide memory and storage solutions for any range of reliability, thermal, and endurance requirements for diverse industries and segments.

ATP’s commitment: WE BUILD WITH YOU. One size does not fit all; hence, ATP offers custom configurable in house design, testing, and tuning with ATP developed firmware and hardware.

All products are meticulously tested and validated before leaving ATP’s manufacturing facilities to make sure that they comply with the strictest industry standards and that they will operate reliably under rugged conditions and workloads for a long time.

ATP and Rutronik are long standing partners, constantly striving to meet customer requirements with their shared values of quality, reliability, and best TCO.

ATP’s main office is in Taipei, with its new manufacturing facility at Ciaotou Science Park in Kaohsiung, Taiwan expected to be operational and LEED certified in 2025. ATP serves the global market with offices strategically located in Europe (Germany), USA (California), and Asia (China and Japan).

Product Overview

DRAM Modules

Multi-Generational Accelerated Computing

Multi-generational solutions range from legacy DDR3/DDR2/DDR1, DDR4, and the latest DDR5 solutions. ATP DRAM modules deliver robust performance, durable build, and the right density for the toughest
workloads to meet the growing need for accelerated performance in memory intensive and high performance computing applications.

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In Focus:

ATP’s DDR5 Memory Feeds the Need for Speed, Higher Density, and Lower Power

ATP introduces DDR5, the next-generation DRAM specification memory that brings several significant improvements and advantages over its previous memory generation. Here are some of the reasons why ATP’s DDR5 delivers key performance gains.

2X the speed with 4800/5600 MT/s memory bandwidth
Up to 256 Gb density with 8-Layer through-silicon via (TSV) package.
Lower power consumption with a mere 1.1V operating voltage
Better power architecture with on-board Power Management Integrated Circuit (PMIC)
Precise temperature control

Managed NAND

Extreme Endurance, Advanced Performance in a Tiny Package

ATP’s managed NAND solutions integrate raw NAND flash memory and hardware controller. As soldered down solutions, they are secure against constant vibrations, making them ideal for embedded and automotive
applications requiring rugged endurance and durability. Their tiny footprint makes them perfectly suitable for embedded systems with space constraints but require rugged endurance, reliability and durability in harsh environments. They are available in two form factors: e.MMC, which uses a 153 ball fine pitch ball grid array (FBGA package) and NVMe Heat Sink Ball Grid Array (HSBGA), using high speed PCIe 3.0 interface x4 lanes to deliver up to 32 Gb/s bandwidth at 8 Gb/s per lane.

In Focus:

3D TLC e.MMC Offerings Configured as Pseudo SLC (pSLC) Offer Endurance on Par With SLC NAND

ATP’s E750Pi/Pc Series e.MMC offerings built with 3D TLC NAND flash but configured as pseudo SLC (pSLC) offer endurance on par with SLC NAND, while the E650Si/Sc Series in native TLC has near MLC endurance. The extended endurance is made possible using an innovative die package that enables long-life performance and optimized power consumption.

Industrial temperature-operable (-40°C to 85°C)
Low power consumption in Sleep Mode
Support high-speed 400 (HS400) DDR mode for a bandwidth of up to 400 MB/s.
Customizable package size option (9 x 10 mm)
Standard 153-ball grid array (BGA), with customizable ball variations depending on project support.

SSD Solutions

A New Breed of Storage Solutions for the Industrial Enterprise

As information technology (IT) and operational technology (OT) converge, relentless data generation is requiring a new breed of data storage solutions. ATP SSDs and modules meet the diverse and growing data storage needs of the industrial enterprise. They are custom configurable, offer enhanced firmware, and undergo stringent reliability testing such as Four Corner, Temperature Cycling, and Power Cycling Tests. They support the latest high speed NVMe™ protocol on a PCIe^® 4.0 x4 interface as well as proven interfaces such as SATA 6 Gb/s and USB. Various form factors include U.2, 2.5” SSDs, M.2, mSATA, and eUSB modules.

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In Focus:

Industrial 176-Layer PCIe® Gen 4 x4 M.2, U.2 SSDs Offering Excellent R/W Performance, 7.68 TB Capacity

ATP’s latest high-speed N601 Series M.2 2280 and U.2 solid state drives (SSDs) sport the 4th generation PCIe® interface, with 16 GT/s data rate doubling that of the previous generation, translating to a bandwidth of 2 GB/s for every PCIe lane. These SSDs use x4 lanes for a maximum bandwidth of 8 GB/s to meet the growing need for high-speed data transfer in today’s demanding applications. They are suitable for both read/write-intensive, mission-critical industrial applications such as networking/server, 5G, data logging, surveillance, and imaging, with performance on par, if not better, than mainstream PCIe Gen 4 consumer SSDs in the market.

Built on innovative 176-layer 3D NAND flash
Uses prime 512 Gbit die package for lower cost per GB
Maximum capacities
- M.2 2280: 3.84 TB
- U.2: 7.68 TB
Excellent Quality of Service (QoS)

Memory Cards

Small Cards, Big Performance for the Intelligent Edge

ATP memory cards are excellent for non-stop video recording, edge computing, artificial intelligence (AI) enabled surveillance, robotics, point of sale (POS) transactions, handheld computing, and other applications requiring the portability of removable storage media. Ideal for storing operating systems (OS) and/or application programs, or to extend storage capacity. The small yet ruggedized form factor is IP57/IP67 certified and supports the industrial temperature range (-40 °C to +85 °C) for reliable function even in harsh environments. Available form factors include SD/microSD cards, legacy CF and CFast cards (SATA interface) as well as the CFexpress Type B (PCIe/NVMe) cards using the PCIe^® 4.0 x2 interface.

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Coming Soon!

High-Endurance Video Recording, 512 GB Max. Capacity Memory Cards for AI Surveillance Infrastructures

ATP is slated to introduce early next year its new S650Si (TLC) and S750Pi (pSLC) Series SD and microSD memory cards built with 176-layer 3D NAND technology and low-density parity check (LDPC) controller. With expanded capacity offerings up to 512 GB and 5-year extended supply longevity support, the new memory cards are targeted for growing segments spurred by 5G, artificial intelligence (AI), and edge technologies, such as AI-enabled surveillance, smart homes, mobile monitoring, automotive recorders, remote healthcare, and security surveillance systems requiring heavy write and re-write usage.

Two configurations
- Native TLC Mode (S650Si Series) Capacities: 64 GB to 512 GB. Endurance rating: 5K+ P/E cycles
- pSLC Configuration (S750Pi Series) Capacities: 16 GB to 128 GB. Endurance rating: 100K+ P/E cycles
Industrial temperature-operable (-40°C to 85°C)
Power loss protection technology
ATP SD Life Monitor with Intelligent Workload Inspection
Joint Validation Testing (value-added service)
Advanced Card Analysis with ATP’s uniquely designed substrate and debug tool