SiC MOSFETs typically have a significantly lower negative than positive gate voltage. Therefore, asymmetric protection with two separate TVS diodes was previously required, which took up more space in the design. To meet this challenge, Littelfuse offers the integrated asymmetric, bidirectional TVS diode Type SMFA.
The components impress with low inductance and excellent clamping capability. They meet the requirements of IEC 61000-4-2 at 30 kV air and 30 kV contact discharge, as well as those of flammability class UL94 V-0. The whisker test is carried out based on JEDEC JESD201A in accordance with Table 4a of Classes 1 and 2.
Depending on the required maximum gate voltage, various types with positive breakdown voltages (VBR) between 17.6 V and 23.4 V are offered. The negative breakdown voltage is 7.15 V in each case.
Overview of benefits:
- Asymmetrical diode for protection against both positive and negative overvoltage
- Excellent clamping ability
- Low inductance
- Glass passivated junction chip
- Surface mountable
- Low profile SOD-123FL package with 1.08 mm height
- Tape & reel standard packaging
Halogen-free and RoHS compliant
Application examples:
- Power supplies for AI/data centers or servers
- Highly reliable power supplies for semiconductor/industrial equipment
- High-efficiency power supplies for EVI (Electric Vehicle Infrastructure)
For more information to the asymmetric TVS diodes by Littelfuse and a direct ordering option, please visit our e-commerce platform at www.rutronik24.com. |
Contact Rutronik:
| Leonardo Sarcone | Senior Manager Product Marketing Standard Products | +49 7231 801 1712 | leonardo.sarcone@rutronik.com |