In addition to high switching speed, both types offer high linearity up to 26dBm input power as well as low insertion loss and high port to port isolation up to 6GHz. The low current consumption enables further power savings at system level.
The RF switches are manufactured in Infineon's patented MOS technology, offering the performance of gallium arsenide (GaAs) switches with the economy, integration and electrostatic discharge (ESD) robustness of traditional CMOS (Complementary Metal-Oxide-Semiconductor) switches. Unlike switches with GaAs technology, external DC blocking capacitors at the RF ports are only required if the DC voltage is applied externally.
The BGS12WN6 is a Single Pole Dual Throw (SPDT) diversity switch with two ports whereas the BGS14WMA9 is a Single Pole Four Throw (SP4T) switch including four RF ports, each of which can be used as termination of the diversity antenna, handling up to 26dBm.
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