Isolated Gate Driver for GaN BM6GD11BFJ-LB from ROHM - at Rutronik

Rutronik is adding the BM6GD11BFJ-LB single-channel gate driver with integrated insulation from ROHM to its range. The components can control GaN transistors with high electron mobility (high-electron-mobility transistor, HEMT) even at high speeds and have an isolation voltage of up to 2,500 VRMS, a minimum I/O latency of 60 ns, and a minimum input pulse width of just 65 ns. In addition, an under-voltage lockout (UVLO) is integrated into the input side (between VCC1 and GND1) and the output side (between VCC2 and GND2), respectively. The drivers operate reliably over a wide operating temperature range of -40°C to +125°C. They are currently considered the best of their kind for the industrial equipment market. They are available at www.rutronik24.com.