Fujitsu‘s new FRAM eliminates the need both of an SRAM and the related backup battery. This allows manufacturers not only develop more compact designs, but also to save costs for components and maintenance. Compared to an SRAM in a 44-pin TSOP package, the MB85R8M2T saves about 90% of the mounting surface area for memory parts.
With over ten trillion guaranteed read/write cycles, the MB85R8M2T has a much longer life than non-volatile memory EEPROMs from other competitors. Thus, it is ideally suited for industrial applications that require frequent data rewriting, such as real-time data logging and 3D position data logging.
Its wide supply voltage range from 1.8V to 3.6V and the SRAM-compatible parallel interface, the FRAM can be flexibly integrated into designs.
The MB85R8M2T is already in mass production in a 48-pin FBGA package with very small dimensions of 8.00 x 6.00mm, samples can be requested from Rutronik as of now.
You will find more information on the MB85R8M2T from Fujitsu on the e-commerce platform
www.Rutronik24.com (where you can also place orders directly):
<link www.rutronik24.com/product/fujitsu/mb85r8m2tpbs-m-jae1/11001954.html>https://www.rutronik24.com/product/fujitsu/mb85r8m2tpbs-m-jae1/11001954.html</link>
Contact Person (Rutronik):
Isabell Weinlein, Product Sales Manager Memories
Tel: +49 7231 801 1719
e-mail: <link isabell.weinlein@rutronik.com - mail "open internal link">isabell.weinlein@rutronik.com</link>
