Specifications of the channel types at a glance:
- N-Channel:
- 20 V to 800 V drain-source voltage
- Up to 300 A leakage current, VGS at 10 V
- P-Channel
- 20 V to 700 V drain-source voltage
- Up to 300 A leakage current
- Dual N-Channel
- 100 V drain-source voltage
- Up to 2.1 A leakage current
- Asymmetrical N-Channel
- 30 V drain-source voltage
- Up to 85 A leakage current
- Complementary N- and P-Channel
- 16 V, 30 V and 100 V drain-source voltage
- Up to 12 A leakage current
Further features:
- SMD packages (TO-22, -25, -26 and SOT-23)
- RoHS compliant and halogen-free
- Low gate charge
- Maximum operating temperature of +150°C
Example applications:
- Low-voltage applications
- Switching power supplies
- Surface-mount commercial and industrial applications
- Telecommunication systems
- Consumer electronics
For more information to the XSemi power MOSFETs from YAGEO and a direct ordering option, please visit our e-commerce platform at www.rutronik24.com |
Contact Rutronik:
| Hannah Metzner | Team Leader Corporate Product Marketing Power | +49 7231 801 1551 | hannah.metzner@rutronik.com |