650V Gen 3 SiC Diodes from Vishay: High Efficiency and Robustness

11/09/2023 Product News

Rutronik's diode range is now extended by the 3rd generation 650 V SiC diodes in Merged PIN Schottky (MPS) design and 4 A – 40 A from Vishay. They score with excellent resistance to current surges and better efficiency due to lower forward voltage and low capacitive load. At the same time, they operate highly reliably and have passed an HTRB (Higher Temperature Reverse Bias) test of 2000 hours as well as a temperature cycling test of 2000 thermal cycles. This corresponds to twice the number of test hours and cycles of the AEC-Q101 requirements. Typical applications are switching power supplies, as well as AC/DC PFC and DC/DC ultra-high frequency output rectification in FBPS and LLC converters for power generation and research applications. The diodes are available in TO-220AC 2L and TO-247AD 3L through-hole packages, as well as D2PAK 2L (TO-263AB 2L) surface mount packages at www.rutronik24.com.

Compared to silicon diodes with comparable breakdown voltage, SiC devices offer higher thermal conductivity, lower reverse current, and shorter reverse recovery times, which are also almost independent of temperature. This enables operation at temperatures of up to +175 °C without a shift in power efficiency caused by switching losses.

The MPS (Merged PIN Schottky) design offers excellent robustness against power surges and is highly efficient with very low forward voltage drop of up to 1.46 V, low capacitive charge of up to 12 nC, and low reverse leakage current of up to 1.3 µA. Designed for high performance and ruggedness, the diodes meet MSL-1 according to J-STD-020 with a maximum peak temperature of +245 °C – predestined for high-speed hard switching and reliable operation over a wide temperature range. The 650 V Gen 3 Power Merged SiC Schottky diodes are halogen-free and RoHS compliant.

Additional benefits:

Schottky technology on SiC-wide tape-gap material
Positive VF and more efficiency due to thin wafers
Temperature invariant switching behavior
Meets JESD 201 class 1A whisker test requirements

Typical application examples:

AC/DC PFC and DC/DC ultra-high frequency output rectification in FBPS and LLC converters for

server
telecommunication equipment
UPS
Solar inverters

Overview:

Part #	IF(AV) (A)	IFSM (A)	VF at IF (V)	QC (nC)	Configuration	Package
VS-3C04ET07S2L-M3	4	29	1.5	12	Single	D2PAK 2L
VS-3C06ET07S2L-M3	6	42	1.5	17	Single	D2PAK 2L
VS-3C08ET07S2L-M3	8	54	1.5	22	Single	D2PAK 2L
VS-3C10ET07S2L-M3	10	60	1.46	29	Single	D2PAK 2L
VS-3C12ET07S2L-M3	12	83	1.5	34	Single	D2PAK 2L
VS-3C16ET07S2L-M3	16	104	1.5	44	Single	D2PAK 2L
VS-3C20ET07S2L-M3	20	110	1.5	53	Single	D2PAK 2L
VS-3C04ET07T-M3	4	29	1.5	12	Single	TO-220AC 2L
VS-3C06ET07T-M3	6	42	1.5	17	Single	TO-220AC 2L
VS-3C08ET07T-M3	8	54	1.5	22	Single	TO-220AC 2L
VS-3C10ET07T-M3	10	60	1.46	29	Single	TO-220AC 2L
VS-3C12ET07T-M3	12	83	1.5	34	Single	TO-220AC 2L
VS-3C16ET07T-M3	16	104	1.5	44	Single	TO-220AC 2L
VS-3C20ET07T-M3	20	110	1.5	53	Single	TO-220AC 2L
VS-3C16CP07L-M3	2 x 8	54	1.5	22	Common cathode	TO-247AD 3L
VS-3C20CP07L-M3	2 x 10	60	1.46	29	Common cathode	TO-247AD 3L
VS-3C40CP07L-M3	2 x 20	110	1.5	53	Common cathode	TO-247AD 3L

For more information to the 650 V Gen 3 Power Merged Schottky diodes from Vishay and a direct ordering option, please visit our e-commerce platform at www.rutronik24.com.

Contact Rutronik:
Hannah Metzner | Corporate Product Manager Power | +49 7231 801 1514 | hannah.metzner@rutronik.com

Fast switching and low voltage drop: The 650 V Gen 3 Power Merged Schottky Diode from Vishay

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Outstanding robustness, higher reliability and better efficiency: 650 V Gen 3 Power Merged PIN SiC Schottky Diode from Vishay – at Rutronik