The components impress with their particularly low switch-on resistance (RDS(ON)) and can therefore achieve an increase in efficiency of 0.1% compared to the C7 version and even 0.17% compared to P7. The optimized RDS(on) also enables a higher power density, making it possible to minimize products in a silicon-based superjunction (SJ) technology to a single-digit value of 7 mΩ.As MOSFETs, they represent an innovation at system level with a thermal resistance (Rth) that is between 14 % and 42 % lower, a low ringing tendency and simplified operation and integration.
As MOSFETs, they represent an innovation at system level with a thermal resistance (Rth) that is between 14 % and 42 % lower, a low ringing tendency and simplified operation and integration.
Benefits at a glance:
- World class RDSon * A
- Integrated fast body diode
- Excellent commutation robustness
- Advanced connection technology
- Housing with top side cooling
- Low ringing tendency
- 14 - 42% lower Rth
- Simplified portfolio
- Innovation at system level
Application examples:
- Automotive
- EV charging, solar and energy storage systems
- End consumer appliances:
- Air conditioning systems for residential buildings
- Refrigerator compressors
- Chargers, adapters Networks and telecommunications:
- Servers
- Industry
- UPS systems
- Industrial SMPS
- Relays, circuit breakers
- Lighting systems
For more information to the CoolMOS™ 8 from Infineon and a direct ordering option, please visit our e-commerce platform at www.rutronik24.com. |
Contact Rutronik:
| Hannah Metzner | Team Leader Corporate Product Marketing Power | +49 7231 801-1551 | hannah.metzner@rutronik.com |
